On the accuracy of structure-factor measurements in GaAs by CBED

Abstract

By comparing the experimental intensity in convergent-beam electron diffraction (CBED) patterns along the [h,0,0], [h,h,0] and [h,h,h] systematics directions with three-dimensional Bloch-wave calculations, we have refined the low-order structure factor amplitudes of GaAs. (For Si, see) The experimental data were collected using a Philips EM400 electron microscope and a Gatan model 607 electron energy loss spectrometer (EELS) tuned to the elastic peak. By placing the scan coils of the microscope under the control of a PDP11 computer, the CBED patterns could be scanned over the EELS entrance slit. Data were collected at 120kV and -183°C to reduce phonon scattering and contamination. The angular resolution was 0.6% of the (200) Bragg angle. The refinement parameters in the calculations were high voltage (obtained from HOLZ lines), thickness (obtained from outer CBED fringes), absorption potentials (from the asymmetry of the (000) disk) and the low-order structure factors Vg(from inner peaks).