Abstract
In contrast to the case of ordinary quantum Hall effect, the resistance of ballistic helical edge channels in typical quantum spin-Hall experiments is non-vanishing, additive and poorly quantized. Here we present a simple argument connecting this qualitative difference with a spin relaxation in the current/voltage leads in an experimentally relevant multi-terminal bar geometry. Both the finite lead resistance and the spin relaxation contribute to a non-vanishing four-terminal edge resistance, explaining poor quantization quality. We show that corrections to the four-terminal and two-terminal resistances in the limit of strong spin relaxation are opposite in sign, making a measurement of the spin relaxation resistance feasible, and estimate the magnitude of the effect in HgTe-based quantum wells.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
