Abstract
The accuracy of the constant I/sub DS/-V/sub DS/ version of the Shannon-Buehler method is considered. The variation of the effective mobility with gate voltage and substrate bias results in the difference between the measured and actual channel impurity profiles. General expressions that allow one to compute correction factors using different MOSFET mobility models are derived. General results are illustrated by considering two commonly used mobility models.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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