Abstract
After a criticism on today’s model for electrical noise in resistors, we pass to use a Quantum-compliant model based on the discreteness of electrical charge in a complex Admittance. From this new model we show that carrier drift viewed as charged particle motion in response to an electric field is unlike to occur in bulk regions of Solid-State devices where carriers react as dipoles against this field. The absence of the shot noise that charges drifting in resistors should produce and the evolution of the Phase Noise with the active power existing in the resonators of L-C oscillators, are two effects added in proof for this conduction model without carrier drift where the resistance of any two-terminal device becomes discrete and has a minimum value per carrier that is the Quantum Hall resistance Rk=h/q2 Ω
Highlights
IntroductionThe work entitled: “On the first measurement of shot noise in macroscopic resistors by J
Few years ago, the work entitled: “On the first measurement of shot noise in macroscopic resistors by J
The absence of the shot noise that charges drifting in resistors should produce and the evolution of the Phase Noise with the active power existing in the resonators of L-C oscillators, are two effects added in proof for this conduction model without carrier drift where the resistance of any two-terminal device becomes discrete and has a minimum value per carrier that is the Quantum resistance RK q2
Summary
The work entitled: “On the first measurement of shot noise in macroscopic resistors by J. Since scientific dogmas use to be replaced by better ideas (not necessarily new ones) excelling them in some way, let us summarize the main contributions of this paper by rewriting these statements as: “Shot noise in resistors is observed routinely but disguised as Johnson noise It comes from those electrons that pass randomly between terminals in Thermal Equilibrium (TE). Since v(t) is the difference of two electrical potentials that appears simultaneously at terminals D-D, the capacitance C between terminals is the key element that links Cause (Fluctuations of charge in C) with its measurable Effect that is v(t) This key role does not depend on the resistance R between terminals and it allowed us to tell that Johnson noise of Solid-State resistors measured in V2/Hz is the Effect of a Cause (charge noise power in C2/s, Nyquist noise density in A2/Hz) that is the shot noise density of electrons passing randomly between the plates of C in the resistor [4]
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