Abstract
Halogen lamp annealing (Heatpulse 210T) has been successfully applied to combine the following tasks in a single step: the reflow of LPCVD PSG layers, the recrystallization of doped poly‐Si interconnections, the formation of shallow n+‐junctions using the same poly‐Si as diffusion source. Recrystallized in situ P‐doped poly‐Si layers had a resistivity of 0.6–0.8 mΩ‐cm, as low as the best reported values obtained on after‐doped samples. An FTIR analysis of the PSG layers revealed structural changes leading to continuous modification of their optical properties during the annealing step itself, which, consequently, determines their annealing efficiency. Obtained results can contradict expectations on the basis of well‐established furnace annealing performance of the structures. In particular, the P‐concentration dependence of the PSG reflow can be dominated by the above effects, and recrystallization of poly‐Si can also depend on the PSG coating on the top. Hence, there is a need for empirical determination of lamp annealing properties on each significantly different layer structure.
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