Abstract
Several recovery time effects in germanium point contact diodes are described and a hypothesis is proposed to explain the observed effects. This hypothesis postulates the presence of traps in the germanium p layer near the point electrode. Measurements and computations based on this hypothesis give trap densities of the order of 1016/cm3, trap depths in the energy band of the order of 0.3 electron volts, and capture cross-section diameters for the traps of the order of 0.3 Å.
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