Abstract
Abstract The experimental results concerning self-diffusion in Si and Ge are discussed. We note, using recent direct experimental data, that there is no temperature variation of the activation energy for self-diffusion, as it was postulated by Seeger and coworkers. We calculate the sum of the formation and migration vibrational entropies for a vacancy, versus the lattice distortion which occurs around this vacancy. We obtain, using a Morse potential to obtain force constants, a lower limit for the value of this entropy at high temperature which is in correct agreement with the large (10–15 k) experimental value. We conclude that the model, proposed by Seeger and coworkers. that self-diffusion occurs through extended defects (vacancies or interstitials), can be definitively ruled out.
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