On resolving hot carrier induced degradation mechanisms in silicon-on-sapphire metal-oxide-semiconductor field-effect transistors

Abstract

Hot carrier induced damage in silicon-on-sapphire (SOS) metal-oxide-semiconductor field-effect transistors (MOSFETs) are reported. Various experimental techniques—the peak linear-region transconductance change, extrapolated threshold voltage shift, exponent in time dependence of transconductance, and charge pumping current—are employed to explore the degradation mechanisms. Hot light holes alone in silicon-on-sapphire MOSFETs are found ineffective in generating interface states, but their interaction with trapped electrons are.