Abstract
In the present paper, performance analysis of a resonant-cavity-enhanced Si/Si 1−y Ge y /Si multiple quantum well photodetector has been carried out. The effects of material parameters of active Si 1−y Ge y layers and carrier trapping by the potential barriers at the heterointerfaces of Si/Si 1−y Ge y /Si quantum wells on the bandwidth (BW) and responsivity of the detector have been investigated using numerical simulation. Results on possible optimum designs of the photodetector have been suggested to maximize responsivity-BW product.
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