On Optimization of Manufacturing of Bipolar Heterotransistors Framework Circuit of a High-voltage Element or to Increase Their Integration Rate: On Influence Mismatch-induced Stress

E L Pankratov

doi:10.13189/ujam.2019.070301

Abstract

In this paper, we introduce an approach to decrease dimensions of bipolar heterotransistors framework a circuit of a voltage divider biasing common emitter amplifier. Framework of the approach, we consider manufacturing of the divider in heterostructure with specific configuration. Several specific areas of the heterostructure should be doped by diffusion or by ion implantation. After this doping, dopant and/or radiation defects should be annealed by using optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. To make prognosis of technological process and obtain recommendations to optimize the process, we introduce an analytical approach to analyze mass and heat transport in heterostructures with account mismatch-induced stress.

Highlights

In the present time, several actual problems of solid state electronics are intensively solving [1,2,3,4,5,6]
We introduce an approach to manufacture a bipolar transistor
Based on recently obtained approximations we analyzed redistributions of dopant and radiation defects during annealing and under influence of mismatch-induced stress

Summary

Introduction

Several actual problems of solid state electronics (such as increasing of performance, reliability and density of elements of integrated circuits: diodes, field-effect and bipolar transistors) are intensively solving [1,2,3,4,5,6]. To increase the performance of these devices, it is attracted an interest determination of materials with higher values of charge carriers mobility [7,8,9,10]. One way to decrease dimensions of elements of integrated circuits is manufacturing them in thin film heterostructures [3,4,5, 11]. In this case, it is possible to use inhomogeneity of heterostructure to improve properties of considered devices. An alternative approach to using heterostructures is using laser or microwave types of annealing [17,18,19]

Methods

Discussion

Conclusion