Abstract
AbstractAbstractauthoren Optical polarization is a fundamental property of light emission from m‐plane InGaN quantum wells. It is a result of band structure, anisotropic strain, the degree of polarization depending on thermal occupation, and band‐filling of valence subbands. We analyze the optical‐polarized light of nonpolar samples at low and at room temperature over a wide range of excitation density. We observe that the measured energy separation and linewidth of the orthogonally polarized emission depend on carrier density, too. A consistent explanation of these effects is possible in the context of Fermi–Dirac statistics for a degenerate carrier density and inhomogeneously broadened density of states. In addition, pulsed electroluminescence experiments were performed to validate our conclusions for optoelectronic devices based on nonpolar InGaN quantum wells.
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