Abstract
Conventional ohmic boundary conditions are shown to be inconsistent with density-gradient (DG) theory. New ohmic conditions that are consistent with DG theory are then derived and illustrated with two device examples. The first example uses a short p-n diode to understand the basic situation while the second treats a MOSFET contact and studies the “insulator proximity effect” seen at the point/edge where the ohmic contact abuts an insulator.
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