Abstract
We consider the numerical simulation of coupled semiconductor devices, as arising for example in integrated circuits. The devices are assumed to be described by a well‐known system of partial differential equations, describing the evolution of the carrier densities and electrostatic potential. It is well‐known that this system of equations exhibits a serious “stiffness” problem which complicates the application of numerical methods. Furthermore, if the number of space dimensions in the device models exceeds one, the application of implicit time‐differencing leads to a prohibitively complex discrete system to be solved at each time step. This paper presents a generalization of some earlier work, in which a method is proposed which avoids this difficulty, and which is applicable to device models with any number of space dimensions. In this procedure, the internal computations are performed separately for each device, and each of the internal arrays is completed separately. Thus the computation is essentially reduced to the solution of a series of discrete linear second‐order elliptic systems.
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