Abstract
Triple-junction solar cells InGaP/GaAs/Ge usually are manufactured using MOCVD technology. However, the potential of such structures is investigated in the laboratory on samples made using MBE. One of the ways to increase efficiency is the implanting of InAs quantum dots in GaAs cascade. In this paper the approaches to the mathematical modeling of Ga (In) As structures grown by MOCVD and MBE are studied.
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