Abstract
The possibility of determining the band gap of homogeneous p–n structures from the properties of the current–voltage characteristics at two temperatures (room temperature and temperatures 30 to 50°C higher) is shown. A working formula for the calculation is derived, and practical application of the formula in determining the band gap is illustrated by the example of p–n structures based on silicon, gallium arsenide, and gallium phosphide. The results are in agreement with commonly accepted data with an accuracy of 1%. In addition, the possibility of determining the band gap of homogeneous p–n structures from the capacitance–voltage characteristics recorded at the above-indicated temperatures is shown.
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