Abstract
A method is proposed for increasing the radiation resistance of semiconductor crystals (AlxGa1-x)2O3, which are promising for creating power electronics and optoelectronic devices for spacecraft performing tasks in near-earth orbits. The effect of the aluminum content on the bandgap in (AlxGa1-x)2O3 single crystals grown from a melt by the Czochralski method is investigated. The necessary conditions for the formation of a high-quality seed and subsequent growth of single crystals are achieved by setting temperature gradients at each successive stage of growth. The results of energy-dispersive X-ray spectroscopy analysis and optical transmission spectra of (AlxGa1-x)2O3 crystals with an aluminum content from 0 to 7.32% are presented. It is shown that an increase in the aluminum content leads to a monotonic increase in the bandgap from 4.7 eV to 5.0 eV, which provides an increase in radiation resistance.
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