On heating mechanisms in LEDs based on p-InAsSbP/n-InAs(Sb)

Chernyakov A. E. Chernyakov A. E.,Kunkov R. E. Kunkov R. E.,Usikova A. A. Usikova A. A.,Lukhmyrina T. S. Lukhmyrina T. S.,Zakgeim A. L. Zakgeim A. L.,Karandashev S. A. Karandashev S. A.,Remennyi M. A. Remennyi M. A.,Klimov A. A. Klimov A. A.,Matveev B. A. Matveev B. A.

doi:10.21883/sc.2023.01.55619.4338

On heating mechanisms in LEDs based on p-InAsSbP/n-InAs(Sb)

Chernyakov A. E. Chernyakov A. E., Kunkov R. E. Kunkov R. E. + Show 7 more

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https://doi.org/10.21883/sc.2023.01.55619.4338

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Journal: Semiconductors

Publication Date: Jan 1, 2023

Affiliation: Submicron Heterostructures for Microelectronics Research and Engineering Center, Ioffe Institute

#Electron-phonon Interaction #IR LED + Show 8 more

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Abstract

Three main reasons for a temperature increase in activated p-InAsSbP/n-InAs/n-InAsSbP and p-InAsSbP/ n-InAsSb/n-InAs double heterostructures has been considered, contribution of nonradiative Auger recombination, electron-phonon interaction and Joule heating to diode temperature increase in single element LEDs and flip-chip diode arrays (1x3) were evaluated at forward and reverse bias using data on spatial distribution of the mid-IR radiation intensity and current-voltage characteristics. Keywords: IR LED, IR diode array, Joule heating, Auger recombination, electron-phonon interaction.

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