Abstract
Hall scattering factors for electrons and holes in molecular beam epitaxial GaAs layers have been determined by comparing carrier concentrations measured by the Hall effect with those measured by the electrochemical capacitance–voltage technique. The conclusion is that both the electron and hole scattering factors are near unity for n ranging from 2×1016 to 7×1017 cm−3, and p ranging from 5×1016 to 4×1019 cm−3. This conclusion is consistent with the present theory for electrons, but not with that for holes.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
