Abstract
In this paper we introduce an approach to organize a drain of radiation defects. These defects were generated during ion doping and other types of radiation processing of the working area of integrated circuits manufactured in the framework of a multilayer structure. The approach is based on the difference between the properties of materials of the layers in the considered multilayer structure. An analytical approach for analysis of mass and heat transfer in multilayer structures was introduced with an account of the spatial and temporal variations of their parameters, as well as the nonlinearity of the considerate processes.
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