Abstract

The integration of high-quality III–V light sources on the Si platform has encountered a challenge that demands a highly precise on-demand addressability of single devices in a significantly reduced integration area. However, simple schemes to address the issue without causing major optical losses remain elusive. Here, we propose a waveguide-integrated microlaser-on-silicon in which the III–V/Si integration requires only a small micron-sized post structure with a diameter of <2 µm and enables efficient light coupling with an estimated coupling efficiency of 44.52%. Top-down fabricated high-quality microdisk cavities with an active gain medium were precisely micro-transferred on a small Si-post structure that was rationally designed in the vicinity of a strip-type Si waveguide (WG). Spectroscopic measurements exhibit successful lasing emission with a threshold of 378.0 µW, bi-directional light coupling, and a propagation of >50 µm through the photonic Si WG. Numerical study provides an in-depth understanding of light coupling and verifies the observations in the experiment. We believe that the proposed microlaser-on-Si is a simple and efficient scheme requiring a minimum integration volume smaller than the size of the light source, which is hard to achieve in conventional integration schemes and is readily applicable to various on-demand integrated device applications.

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