On demand-direct synthesis of Si and Ge nanowires on a single platform by focused laser illumination

Abstract

Laser irradiation can incur spatially confined and rapid heating that enables precisely controlled nucleation and subsequent growth of nanomaterials. This localization of the laser-driven growth can realize on-demand, direct synthesis of nanowires composed of multiple elements on a single platform. In this study, silicon and germanium nanowires are grown by laser-induced vapor-liquid-solid mechanism in a hetero-array configuration by simply switching the reactant gas precursors as the growth of nanowires is limited within the heat-affected zone induced by the laser. Energy dispersive x-ray and Raman spectroscopies were performed to observe the elemental composition and crystallinity of as-grown nanowires, respectively.