On-current Modeling of 70-nm PMOSFETs Dependent on Hot-carrier Stress Bias Conditions

Abstract

Based on the drain-avalanche-hot-carrier (DAHC-) mechanism, a stress-bias-dependent oncurrent model is proposed for 70-nm p-channel metaloxide-semiconductor field-effect transistors (PMOSFETs) by using only one device parameter: channel length variation (ΔLSUBch/SUB). The proposed model describes the influence of drain and gate stress bias on the oncurrent of PMOSFETs successfully. It is a simple and effective method of predicting the on-current variation for more reliable circuit operation.