Abstract
A novel process and temperature compensation design for 2 VDD output buffers is proposed, where the threshold voltages (Vth) of PMOSs and NMOSs varying with process and temperature deviation could be detected, respectively. A prototype 2 × VDD output buffer using the proposed compensation design is fabricated using a typical 0.18 μm CMOS process. By adjusting output currents, the slew rate of output signals could be compensated over 117%. The maximum data rate with compensation is 120 MHz in contrast with 95 MHz without compensation, which is measured on silicon with an equivalent probe capacitive load of 10 pF.
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More From: IEEE Transactions on Circuits and Systems I: Regular Papers
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