Abstract
Electro Static Discharge (ESD) is one of the major causes of electronic system failures. Reliability of ICs within the applications is strongly related to the on-chip propagated waveform of the ESD stress on the power supplies, the substrate and through the protections. This paper presents an on-chip oscilloscope developed for in-situ measurement of real ESD event in 65nm CMOS technology. Dynamic measurements of overshoots, substrate fluctuation and onchip radiated fields presented in this paper are performed with 20GHz bandwidth.
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