On-chip low-loss all-optical MoSe2 modulator.

Abstract

Monolayer transition metal dichalcogenides (TMDCs), like MoS2, MoSe2, WS2, and WSe2, feature direct bandgaps, strong spin-orbit coupling, and exciton-polariton interactions at the atomic scale, which could be harnessed for efficient light emission, valleytronics, and polaritonic lasing, respectively. Nevertheless, to build next-generation photonic devices that make use of these features, it is first essential to model the all-optical control mechanisms in TMDCs. Herein, a simple model is proposed to quantify the performance of a 35-μm-long Si3N4 waveguide-integrated all-optical MoSe2 modulator. Using this model, a switching energy of 14.6 pJ is obtained for a transverse-magnetic (TM) and transverse-electric (TE) polarized pump signals at λ = 480 nm. Moreover, maximal extinction ratios of 20.6 dB and 20.1 dB are achieved for a TM and TE polarized probe signal, respectively, at λ = 500 nm with an ultra-low insertion loss of <0.3 dB. Moreover, the device operates with an ultrafast recovery time of 50 ps, while maintaining a high extinction ratio for practical applications. These findings facilitate modeling and designing novel TMDC-based photonic devices.