On-Chip Integration of Orthogonal Subsystems Enabled by Broadband Twist at 220–325 GHz

Abstract

In this article, we report for the first time on a low-loss compact platform that enables the integration of H-and E-plane rectangular waveguide subsystems enabled by 90 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{\circ}$</tex-math> </inline-formula> polarization rotation of rectangular waveguide sections on a silicon-micromachined chip. The proposed platform offers unprecedented design flexibility for a 2.5D fabrication technology such as silicon micromachining, since orthogonal waveguide device sections with full design freedom in H-plane geometries can be cofabricated with sections with full design freedom in E-plane geometries, enabled by novel, integrated waveguide twists optimized for 2.5D fabrication. The platform is developed for use in broadband millimeter-and submillimeter-wave waveguide circuits and prototypes are implemented in the 220–325-GHz band. A prototype chip demonstrating the platform, implemented by bonding three stacked silicon chips, is fabricated. The measured results of the twist prototype exhibit a very low insertion loss of less than 0.2 dB and a return loss of 20 dB or better in most of the 220–325-GHz band. An integrated eighth-degree lowpass waveguide filter with axial ports having a cut-off frequency of 280 GHz is codesigned with the twist transition and fabricated on the platform to demonstrate its application. The filter shows 0.4-dB measured insertion loss and has a measured return loss in the passband of better than 14 dB.