On chemical kinetics of silicon deposition from silane (III). LPCVD poly silicon formation in the temperature range 900–950 K

Abstract

AbstractLPCVD poly Silicon deposition form silane has been investigated for limited conditions regarding temperature, silane input and pumping speed. It has been found that layer growth is controlled by a chemical reaction of 0.5th‐order in consequence of which growth rate linearly decays along the axis of an open isothermal reactor tube. The slope of that decay is determined not only by the reaction rate constant but also by linear gas velocity within the tube and that part of total substrate surface area that is effectively exposed to silane at each wafer position. In conseqence growth rate decay is the steeper not only the higher temperature will be chosen but also the slower gas velocity is adjusted and the smaller wafers are separated to each other. The kind of how axial layer growth rate distribution is effected by changing wafer spacing is a proof for the heterogeneous reaction mechanism. The silicon forming reaction is characterised by an activation energy of about 52 kcal/mole.