Abstract
The frequency-dependent values for the capacities obtained for GaAs, GaAsP and GaP were interpreted by means of the usual equivalent circuit with the capacity of the surface states and that of the depletion layer in parallel. Consistent results are obtained only assuming a continuous energetic distribution of surface states in the forbidden gap. Adsorption of a dye and Ru3+ leads to an altered distribution function, the maximum appearing can be accounted for by superimposing a Lorentz function on the cosh type of function. The dye adsorption was determined radiochemically and obeys a Freundlich isotherm. Ellipsometric measurements under the same conditions suggest the formation of non-passivating surface films in the electrolytes used.
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