On capacitance–voltage characteristics of non-hydrogenated amorphous silicon/crystalline silicon heterojunctions for solar-cell applications

Abstract

This work presents the performance of a HIT (Heterojunction with Intrinsic Thin layer) solar cell which was fabricated for the first time in the Advanced Electronics Laboratory of Batna 2 University by sputtering silicon on p-type crystalline silicon substrate. This initial effort was a tentative to learn about the fabrication technique and the control of the deposition parameters involved in the fabrication process. Preliminary capacitance voltage measurements confirm an abrupt junction model in consistence with the earlier published data. A junction depth of 0.58 µm and a diffusion voltage of 1.65 V were obtained. A defect density in the gap of non-hydrogenated amorphous silicon of 6.93 1014 cm−3 was computed indicating the presence of defect states.