Abstract
Our recent proposal of using the transition metal impurity levels to predict the isovalent heterojunction (HJ) band-edge discontinuities is further discussed. It is shown that for Ga1−xAlxAs/GaAs heterojunctions most of the recent discontinuity data follow within experimental error the prediction of the ΔEcb:ΔEvb= 0.64:0.36 discontinuity ratio derived from the Fe2+ level position in Ga1−xAlxAs compound. Predictions of valence-band discontinuities for the other III–V and II–VI HJ systems are also given.
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