Abstract
This paper describes fabrication methods for nanometer-pitch grating buried in the semiconductor for the future electron wave devices. Both wet chemical etching and selective growth are promising methods of grating formation on the surface of the semiconductor and also are damage-free processes. In the regrowth process to embed the grating, it is important to suppress the thermal deformation. Experimentally, InP corrugations 70nm-pitch grating were formed on InP surface in two ways — wet chemical etching and selective growth by OMVPE. InP gratings of 70nm pitch and 100nm depth were buried by OMVPE in GaInAs.
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