Abstract
We report on the fabrication of porous hot-wire deposited WOx (hwWOx) films with omnidirectional antireflective properties coming from in-depth variation of both (i) void fraction from 0% at the Si substrate/hwWOx interface to 30% within less than 7nm and to higher than 50% at the hwWOx/air interface, and (ii) x, namely hwWOx stoichiometry, from 2.5 at the Si/hwWOx to 3 within less than 7nm. hwWOx films were deposited by means of hw deposition at rough vacuum and controlled chamber environment. The films were analyzed by Spectroscopic Ellipsometry to extract the graded refractive index profile, which was then used in a rigorous coupled wave analysis (RCWA) model to simulate the antireflective properties. RCWA followed reasonably the experimental reflection measurements. Void fraction and x in-depth variation, controlled by the hw process, greatly affect the antireflective properties, and improve the omnidirectional and broadband characteristics. The reflection suppression below 10% within the range of 500–1000nm for angles of incidence up to more than 60° is demonstrated.
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