Abstract
Graphene oxide was explored as doping material that doped into hole transporting layer(NPB) and electron transporting layer(Alq3) via thermal co-evaporation respectively to fabricate two types of OLED devices.The experimental results indicated that thermal co-evaporation of graphene oxide with Alq3 act as electron transporting layer can improve the device performance while with NPB as hole transporting layer decrease the performance.And it turns out that device doped 10% graphene oxide in Alq3 layer exhibited 1.2 fold higher of luminance and 2 fold higher of current efficiency than that of updoped one.
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