Abstract
Reflectivity measurements over the energy range 0.5-12 eV have been made for the amorphous alloy system a-Si1-yNiy:H with y=0.0, 0.11, 0.28, 0.45. The infrared region of the reflectivity shows evidence of a semiconductor-to-metal transition as y is increased, whilst the visible/ultraviolet regions show a systematic shift in energy of prominent features. Using suitable extrapolations to the reflectivity data, Kramers-Kronig analysis has enabled the determination of in 1, in 2 and hence the OJDOS (optical joint density of states) for the system. A schematic valence and conduction band DOS has been deduced from these data in conjunction with the previously determined variation of optical bandgap with composition.
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