Abstract
In the classical analysis of charge transport in solids by Lampert in 1956 an Ohmic current is attributed to the presence of a background carrier density due to (unintentional) doping. We demonstrate that Ohmic currents are also observed in undoped semiconductors as a result of diffusion of charge carriers from the contacts into the semiconductor. This Ohmic diffusion current shows an enhanced thickness scaling and is governed by the charge-carrier mobility. Specific for organic semiconductors the charge-carrier density dependence of the mobility at zero electric field can be accurately determined from the Ohmic diffusion current.
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