Abstract
Various configurations of pseudograded BeTe/ZnSe superlattices have been investigated to form a nonalloyed contact onto nitrogen-doped p-type ZnSe layers. Best results were obtained by using a fully N-doped superlattice with a 20-ML-thick pseudoperiod and with the thickness of individual layers in the pseudoperiod varying by 1 ML steps. A specific contact resistance of 6×10−2 Ω cm2 has been measured for a ZnSe p-type doping level of 2×1017 cm−3. Truly perfect ohmic contact is obtained.
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