Abstract
Ohmic contacts on diamond have been achieved by B ion implantation and subsequent metallization with a Ta/Au bilayer. The pre-treatment of p-diamond film using boiling aqua regia was effective in reducing oxygen, which plays an important role in forming the Au/Ta/p-diamond ohmic contacts. Sputter deposition and implantation accelerate the interfacial reaction between Ta and diamond film. The formation of TaC makes our contacts to be ohmic in the as-deposited state. Upon annealing, the quantity of TaC increases and it makes the ohmic behavior be improved.
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