Abstract
Molecular-beam epitaxial GaAs layers, grown at 200 or 400 degrees C, show great promise as passivating or insulating films on top of standard n-type MESFET layers (n approximately=1.6*10/sup 17/ cm/sup -3/) grown at normal temperatures (580-600 degrees C). It is shown that ohmic contacts, with specific contact resistances of 10/sup -6/ Omega -cm/sup 2/, can easily be fabricated without removing the cap layers. Preliminary results on capped p-type MESFET layers (p=1.5*10/sup 17/ cm/sup -3/) suggest that a 200 degrees C cap may degrade the contact resistance by a factor of 3-10. >
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
