Abstract
The characteristics of Ni, Monel (Ni-Cu alloy, Ni55mol%-Cu45mol%), Monel/Si, Ni/Ti/Ni and Mo electrodes were studied for ohmic contact to C-face N-type 4H-SiC. Low contact resistivity (ρC) was not compatible with reduction of graphite precipitation in the case of Ni, Monel, Ni/Ti/Ni, and Mo electrodes. Monel/Si achieved less graphite precipitation and low ρC, which is enough to apply for actual rectifier, because a Monel/Si electrode forms a silicide without reaction between the deposits and the substrate.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
