Abstract
The employment of the Zn(Se,Te) pseudo-graded contacting scheme to p-type ZnSe-based alloys contributes directly to the recent demonstration of room temperature continuous-wave operation of II– VI green-blue laser diodes. Contact ohmicity is maintained down to cryogenic temperatures which enabled the investigation of electrical transport properties associated with the p-type nitrogen-doped ZnSe, Zn(S,Se), and (Zn,Mg)(S,Se). The observation of both persistent photoconductivity and a metastable population of holes which are in thermodynamic equilibrium with hydrogenic acceptors having reduced activation energy suggests the presence of a DX-like behavior for holes in p-type (Zn,Mg)(S,Se).
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
