Abstract
We investigate the conduction properties of an embedded, highly phosphorus-doped nanowire with a width of 8nm lithographically defined by scanning tunneling microscope based patterning of a hydrogen-terminated Si(100):H surface. Four terminal I-V measurements show that ohmic conduction is maintained within the investigated temperature range from 35K down to 1.3K. A prominent resistance increase is observed below ∼4K which is attributed to a crossover into the strong localization regime. The low temperature conductance follows a one-dimensional variable range hopping model accompanied by positive magnetoresistance which dominates over weak localization effects at low temperature.
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