Abstract
The purpose of this work is to clarify the relationship between some of the properties of MOS capacitors passivated by lead borosilicate glasses and the hydroxyl contents of the glasses. When PbO content decreased and network forming oxides such as B 2 O 3 , SiO 2 and GeO 2 increased, OH absorption coefficients increased and C - V curve shifts, V G , in MOS capacitors increased. These effects were due to the increase of hydroxyl contents, which depended on the lead borosilicate glass compositions. A good recovery effect in hysteresis loops was observed in MOS capacitors passivated by glasses with a small quantity of hydroxyl ions.
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