Abstract
Recent efforts are being focussed on improving the breakdown voltage (BV) of InAlAs/InGaAs MODFET's on InP towards high-power applications. A detailed understanding of the physics of breakdown in these devices is still lacking. In this paper, we carry out a study of off-state breakdown on state-of-the-art MODFET's in this material system. Through a combination of a surface-depleted cap and mesa-sidewall isolation the devices have BV's of around 10 V. We find that BV shows a negative temperature coefficient and also decreases with a higher InAs mole fraction in the channel. As we have recently found in InAlAs/n/sup +/-InGaAs HFET's, off-state breakdown appears to be a two-step process. First, electrons are emitted by thermionic-field emission from the gate to the insulator. Second, as a consequence of the large electric field in the insulator and the substantial /spl Delta/E/sub C/ between insulator and channel, they enter the channel hot, into the high-field drain-gate region, and relax their energy through impact-ionization. This combined hypothesis is able to explain why the MODFET breakdown voltage depends on both channel and insulator design parameters. >
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
