Abstract
In this work, the off-state breakdown characteristics of two different types InGaP-based high-barrier gate heterostructure field-effect transistors are studied and demonstrated. These devices have different high-barrier gate structures, e.g. the i-InGaP layer for device A and n +- GaAs/p+ -InGaP/n-GaAs camel-like structure for device B. The wide-gap InGaP layer is used to improve the breakdown characteristics. Experimentally, the studied devices show high off-state breakdown characteristics even at high temperature operation regime. This indicates that the studied devices are suitable for high-power and high-temperature applications. In addition, the off-state breakdown mechanisms are different for device A and B. For device A, off-state breakdown characteristics is only gate dominated at the temperature regime from 30 to 180 ∘C. For device B, off-state breakdown characteristics are gate and channel dominated at 30 ∘C and only gate dominated within 150 to 210 ∘C.
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