Abstract
This paper focus the Zener tunneling behaviour near the drain region of Tunnel diode body contact Silicon On Insulator (TDBCSOI). No such work has been reported to the best of our knowledge. High OFF current and asymmetric structure in TDBCSOI makes it less suitable for binary switching devices. Hence it is essential to have a symmetric structure with low OFF current. In this paper a heavily doped P+ region is embedded below N+ drain region of a TDBCSOI. Analysis of the proposed symmetrical topology exihibits reduction of OFF current by an order of 10.
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