Abstract
We report optically detected magnetic resonance (ODMR) measurements on glow-discharge deposited a-SiN x:H in the range 0 < x < 0.95. We observe one quenching and two enhancing resonances close to g=2. The ODMR signals in silicon nitride are analogous to those in a-Si:H, showing the same dependence on experimental parameters (microwave power and chopping frequency, light intensity), although the widths are larger as a result of hyperfine interactions. The magnitude of the quenching resonance is also larger in the nitrides owing to the higher density of dangling bonds, which participate in non-radiative recombination. The results are in agreement with the Robertson-Powell model in which the principal defect in the energy gap of a-SiN x:H is the silicon dangling bond.
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