Abstract
A systematic design procedure for highly linear and reliable amplifiers is proposed. The procedure deals with nonlinear modeling, junction temperature prediction methods, and circuit design techniques. A wideband linear monolithic microwave integrated circuit power amplifier based on a space-qualified GaAs process for $C$ -band and extended $C$ -band multicarrier satellite transponder is reported and described. The amplifier uses a bus-bar combiner in the power stage reaching an output power of 26.7 dBm at 1-dB compression point, with a small signal gain above 25 dB in the operation band between 3 and 6 GHz. The output third-order intercept point reaches levels above 40 dBm. The design ensures high reliability keeping the junction temperature below 112 °C.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Transactions on Microwave Theory and Techniques
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
