Abstract

The design and performance of a two-stage 3.0-6.0 GHz MMIC (monolithic microwave IC) power amplifier that has established a new standard for power output and bandwidth in MMIC form is reported. The amplifier produces 11 W+or-1 dB from 3.0 to 6.0 GHz, with maximum power outputs of 13.5 W and 10.5 W at the respective S and C radar bands, and a minimum power of 9 W. This benchmark eclipses the best power level reported earlier for both two-stage (8 W at C-band) and single-stage (10 W at C-band) narrowband MMIC power amplifiers with a continuous bandwidth coverage of 67%. The yield of this MMIC, based upon 0.5- mu m gate-length selective-implant MESFET technology, averaged 43%, with a 57% yield from the best wafer. >

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