Abstract
In this paper, we apply a Gibbs factor formalism in order to determine the occupation statistics of the different states associated with VGa — ON dislocations within uncompensated n-type wurtzite gallium nitride. We compare our results with those obtained from the simulated annealing analysis of Leung et al. [K. Leung, A. F. Wright, and E. B. Stechel, Appl. Phys. Lett. 74, 2495 (1999)]. This comparison enables us to confirm the validity of a much simpler dislocation defect site occupation formalism that is valid at high dislocation densities and/or low free electron (low bulk doping) concentrations. It is also seen that our formulation provides a notable computational advantage over the energy minimization approach of You et al. [J. H. You, J.-Q. Lu, and H. T. Johnson, J. Appl. Phys. 99, 033706 (2006)].
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