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Abstract
We studied the dependence of the Watkins replacement efficiency on the species of group-III impurities from the measurement of the concentration of $I{\mathrm{H}}_{2},$ a complex of one self-interstitial (I) and two H atoms. If the $I{\mathrm{H}}_{2}$ concentration depends on species of group-III impurities under the same irradiation dose, the smaller concentration means a greater replacement efficiency. Specimens were prepared from floating-zone-grown Si crystals and Czochralski-grown Si crystals doped with B, Al, Ga, and In. After hydrogenation, they were irradiated with 3-MeV electrons at room temperature. We measured the optical absorption of those specimens. The $I{\mathrm{H}}_{2}$ concentration was found to depend on the B concentration, becoming smaller as the B concentration became larger. It also depended on the species of group-III dopants. Hence the replacement efficiency of I and group-III impurities depended on the concentration and species of group-III dopants.
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